Electrical characterization of the AIIIBV-N heterostructures by capacitance methods
Identifieur interne : 000D96 ( Main/Repository ); précédent : 000D95; suivant : 000D97Electrical characterization of the AIIIBV-N heterostructures by capacitance methods
Auteurs : RBID : Pascal:13-0193714Descripteurs français
- Pascal (Inist)
- Hétérostructure, Capacité électrique, Puits quantique multiple, Composé binaire, Arséniure de gallium, Semiconducteur, Composé minéral, Azote, Indium, Croissance film, Méthode MOVPE, DLTS, Caractéristique capacité tension, Porteur libre, Puits quantique, Niveau profond, Energie activation, Section efficace, Phénomène transitoire, Diode barrière Schottky, InGaAsN/GaAs, 6865F, 8107S.
- Wicri :
- concept : Composé minéral, Azote.
English descriptors
- KwdEn :
- Activation energy, Binary compounds, CV characteristic, Capacitance, Cross sections, DLTS, Deep level, Film growth, Free carrier, Gallium arsenides, Heterostructures, Indium, Inorganic compounds, MOVPE method, Multiple quantum well, Nitrogen, Quantum wells, Schottky barrier diodes, Semiconductor materials, Transients.
Abstract
This paper highlights the electrical characterization of three types of the multiple quantum well (MQW) InGaAsN/GaAs heterostructures labelled NI58n, NI59n and NI66n with the nitrogen concentration of about 0.4% and indium content of 12.1 %,13.5% and 13.0%, respectively, using capacitance methods. These MQW InGaAsN/GaAs heterostructures were grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) at various growth conditions. The capacitance-voltage and DLTS measurements of these structures were performed utilizing the measurement system BIORAD DL8000. The CV characteristics measured at different temperatures on all heterostructures show very fine fluctuations of capacitance in the voltage range around 0 V, which is suggested to be a result of free carriers' emission from quantum wells. The absence of GaAs "cap" layer in one of the samples shifted its CV characteristic to lower values of capacity. According to the DLTS measurement it is highly probable that the similar system of defects is present in all samples. The presence of the deep level ET1 is clear in all samples and its parameters were calculated by multi level evaluation (the activation energy of the defect which is approx. ΔET = 0.62 eV, value of effective capture cross-section of the defect σT is about 10-16 cm2, and defects concentration NT is about 1014 cm-3).
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical characterization of the A<sub>III</sub>B<sub>V</sub>-N heterostructures by capacitance methods</title><author><name sortKey="Stuchlikova, Lubica" uniqKey="Stuchlikova L">Lubica Stuchlikova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Harmatha, Ladislav" uniqKey="Harmatha L">Ladislav Harmatha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Petrus, Miroslav" uniqKey="Petrus M">Miroslav Petrus</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Rybar, Jakub" uniqKey="Rybar J">Jakub Rybar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Sebok, J N" uniqKey="Sebok J">J N Sebok</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Sciana, Beata" uniqKey="Sciana B">Beata Sciana</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17</s1><s2>50-372 Wroclaw</s2><s3>POL</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50-372 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Radziewicz, Damian" uniqKey="Radziewicz D">Damian Radziewicz</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17</s1><s2>50-372 Wroclaw</s2><s3>POL</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50-372 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Pucicki, Damian" uniqKey="Pucicki D">Damian Pucicki</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17</s1><s2>50-372 Wroclaw</s2><s3>POL</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50-372 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Tlaczala, Marek" uniqKey="Tlaczala M">Marek Tlaczala</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17</s1><s2>50-372 Wroclaw</s2><s3>POL</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50-372 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Kosa, Arpad" uniqKey="Kosa A">Arpad Kosa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Benko, Peter" uniqKey="Benko P">Peter Benko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Kovac, Jaroslav" uniqKey="Kovac J">Jaroslav Kovac</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author><author><name sortKey="Juhasz, Peter" uniqKey="Juhasz P">Peter Juhasz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava 81219</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0193714</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0193714 INIST</idno><idno type="RBID">Pascal:13-0193714</idno><idno type="wicri:Area/Main/Corpus">000D10</idno><idno type="wicri:Area/Main/Repository">000D96</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Binary compounds</term><term>CV characteristic</term><term>Capacitance</term><term>Cross sections</term><term>DLTS</term><term>Deep level</term><term>Film growth</term><term>Free carrier</term><term>Gallium arsenides</term><term>Heterostructures</term><term>Indium</term><term>Inorganic compounds</term><term>MOVPE method</term><term>Multiple quantum well</term><term>Nitrogen</term><term>Quantum wells</term><term>Schottky barrier diodes</term><term>Semiconductor materials</term><term>Transients</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Hétérostructure</term><term>Capacité électrique</term><term>Puits quantique multiple</term><term>Composé binaire</term><term>Arséniure de gallium</term><term>Semiconducteur</term><term>Composé minéral</term><term>Azote</term><term>Indium</term><term>Croissance film</term><term>Méthode MOVPE</term><term>DLTS</term><term>Caractéristique capacité tension</term><term>Porteur libre</term><term>Puits quantique</term><term>Niveau profond</term><term>Energie activation</term><term>Section efficace</term><term>Phénomène transitoire</term><term>Diode barrière Schottky</term><term>InGaAsN/GaAs</term><term>6865F</term><term>8107S</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term><term>Azote</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper highlights the electrical characterization of three types of the multiple quantum well (MQW) InGaAsN/GaAs heterostructures labelled NI58n, NI59n and NI66n with the nitrogen concentration of about 0.4% and indium content of 12.1 %,13.5% and 13.0%, respectively, using capacitance methods. These MQW InGaAsN/GaAs heterostructures were grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) at various growth conditions. The capacitance-voltage and DLTS measurements of these structures were performed utilizing the measurement system BIORAD DL8000. The CV characteristics measured at different temperatures on all heterostructures show very fine fluctuations of capacitance in the voltage range around 0 V, which is suggested to be a result of free carriers' emission from quantum wells. The absence of GaAs "cap" layer in one of the samples shifted its CV characteristic to lower values of capacity. According to the DLTS measurement it is highly probable that the similar system of defects is present in all samples. The presence of the deep level ET1 is clear in all samples and its parameters were calculated by multi level evaluation (the activation energy of the defect which is approx. ΔE<sub>T</sub> <sub>=</sub> 0.62 eV, value of effective capture cross-section of the defect σ<sub>T</sub> is about 10<sup>-16</sup> cm<sup>2</sup>, and defects concentration N<sub>T</sub> is about 10<sup>14</sup> cm<sup>-3</sup>).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>269</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Electrical characterization of the A<sub>III</sub>B<sub>V</sub>-N heterostructures by capacitance methods</s1></fA08><fA11 i1="01" i2="1"><s1>STUCHLIKOVA (Lubica)</s1></fA11><fA11 i1="02" i2="1"><s1>HARMATHA (Ladislav)</s1></fA11><fA11 i1="03" i2="1"><s1>PETRUS (Miroslav)</s1></fA11><fA11 i1="04" i2="1"><s1>RYBAR (Jakub)</s1></fA11><fA11 i1="05" i2="1"><s1>SEBOK (Ján)</s1></fA11><fA11 i1="06" i2="1"><s1>SCIANA (Beata)</s1></fA11><fA11 i1="07" i2="1"><s1>RADZIEWICZ (Damian)</s1></fA11><fA11 i1="08" i2="1"><s1>PUCICKI (Damian)</s1></fA11><fA11 i1="09" i2="1"><s1>TLACZALA (Marek)</s1></fA11><fA11 i1="10" i2="1"><s1>KOSA (Arpad)</s1></fA11><fA11 i1="11" i2="1"><s1>BENKO (Peter)</s1></fA11><fA11 i1="12" i2="1"><s1>KOVAC (Jaroslav)</s1></fA11><fA11 i1="13" i2="1"><s1>JUHASZ (Peter)</s1></fA11><fA14 i1="01"><s1>Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3</s1><s2>Bratislava 81219</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="02"><s1>Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17</s1><s2>50-372 Wroclaw</s2><s3>POL</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>175-179</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000173246590360</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0193714</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper highlights the electrical characterization of three types of the multiple quantum well (MQW) InGaAsN/GaAs heterostructures labelled NI58n, NI59n and NI66n with the nitrogen concentration of about 0.4% and indium content of 12.1 %,13.5% and 13.0%, respectively, using capacitance methods. These MQW InGaAsN/GaAs heterostructures were grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) at various growth conditions. The capacitance-voltage and DLTS measurements of these structures were performed utilizing the measurement system BIORAD DL8000. The CV characteristics measured at different temperatures on all heterostructures show very fine fluctuations of capacitance in the voltage range around 0 V, which is suggested to be a result of free carriers' emission from quantum wells. The absence of GaAs "cap" layer in one of the samples shifted its CV characteristic to lower values of capacity. According to the DLTS measurement it is highly probable that the similar system of defects is present in all samples. The presence of the deep level ET1 is clear in all samples and its parameters were calculated by multi level evaluation (the activation energy of the defect which is approx. ΔE<sub>T</sub> <sub>=</sub> 0.62 eV, value of effective capture cross-section of the defect σ<sub>T</sub> is about 10<sup>-16</sup> cm<sup>2</sup>, and defects concentration N<sub>T</sub> is about 10<sup>14</sup> cm<sup>-3</sup>).</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07S</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Heterostructures</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Capacité électrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Capacitance</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Composé binaire</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Binary compounds</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé minéral</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Azote</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nitrogen</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Croissance film</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Film growth</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>MOVPE method</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>DLTS</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>DLTS</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Caractéristique capacité tension</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>CV characteristic</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Porteur libre</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Free carrier</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Portador libre</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Puits quantique</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Quantum wells</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Niveau profond</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Deep level</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Nivel profundo</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Energie activation</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Activation energy</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Section efficace</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Cross sections</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Phénomène transitoire</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Transients</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Diode barrière Schottky</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Schottky barrier diodes</s0><s5>20</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InGaAsN/GaAs</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>6865F</s0><s2>PAC</s2><s4>INC</s4><s5>45</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8107S</s0><s2>PAC</s2><s4>INC</s4><s5>46</s5></fC03><fN21><s1>175</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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